| Product Attribute | Attribute Value |
|---|---|
| Part Number | FA57SA50LC |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-227 |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 34A, 10V |
| Power Dissipation (Max) | 625W (Tc) |
| Package / Case | SOT-227-4, miniBLOC |
| Package | Tube |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 338 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Base Product Number | FA57 |
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Microchip Technology
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IXYS
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