| Product Attribute | Attribute Value |
|---|---|
| Part Number | MBR400100CT |
| Manufacturer | GeneSiC Semiconductor |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 200 A |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Technology | Schottky |
| Supplier Device Package | Twin Tower |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package / Case | Twin Tower |
| Package | Bulk |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Reverse Leakage @ Vr | 5 mA @ 20 V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Base Product Number | MBR400100 |
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